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SI7613DN-T1-GE3
Power MOSFET, P Channel, 20 V, 35 A, 0.0087 ohm, PowerPAK 1212, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 37 week(s)
| Quantity | Price |
|---|---|
| 250+ | $0.822 |
Price for:Each (Supplied on Cut Tape)
Minimum: 3000
Multiple: 3000
$2,466.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI7613DN-T1-GE3
Newark Part No.85W3220
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id35A
On Resistance Rds(on)0.0072ohm
Drain Source On State Resistance0.0087ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Power Dissipation Pd52.1W
Transistor Case StylePowerPAK 1212
Gate Source Threshold Voltage Max1V
Power Dissipation52.1W
No. of Pins8Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCLead
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
20V
On Resistance Rds(on)
0.0072ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
52.1W
Gate Source Threshold Voltage Max
1V
No. of Pins
8Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
P Channel
Continuous Drain Current Id
35A
Drain Source On State Resistance
0.0087ohm
Rds(on) Test Voltage
4.5V
Transistor Case Style
PowerPAK 1212
Power Dissipation
52.1W
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate