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SI7615ADN-T1-GE3
Power MOSFET, P Channel, 20 V, 35 A, 0.0044 ohm, PowerPAK 1212, Surface Mount
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ManufacturerVISHAY
Manufacturer Part NoSI7615ADN-T1-GE3Copy
Manufacturer Standard Lead Time37 weeks
Newark Part No.
Full Reel99W9632
Re-Reel09X6451RL
Cut Tape09X6451
Product RangeTrenchFET Series
Your Part Number
6,884 In Stock
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| Total Price | $1.96 | ||
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| 15000+ | $0.420 |
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI7615ADN-T1-GE3Copy
Manufacturer Standard Lead Time37 weeks
Newark Part No.
Full Reel99W9632
Re-Reel09X6451RL
Cut Tape09X6451
Product RangeTrenchFET Series
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id35A
Drain Source On State Resistance0.0044ohm
Transistor Case StylePowerPAK 1212
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max400mV
Power Dissipation52W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET Series
Qualification-
SVHCLead
Product Overview
The SI7615ADN-T1-GE3 is a 20VDS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for load switch, adaptor switch and battery switch applications.
- 100% Rg tested
- 100% UIS tested
- Halogen-free
- -55 to 150°C Operating temperature range
Applications
Industrial, Power Management
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
35A
Transistor Case Style
PowerPAK 1212
Rds(on) Test Voltage
10V
Power Dissipation
52W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.0044ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
400mV
No. of Pins
8Pins
Product Range
TrenchFET Series
SVHC
Lead
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate