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Quantity | Price |
---|---|
1+ | $3.170 |
25+ | $2.810 |
100+ | $2.280 |
500+ | $2.050 |
1000+ | $1.620 |
2500+ | $1.560 |
5000+ | $1.510 |
10000+ | $1.490 |
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Multiple: 1
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI7858BDP-T1-GE3
Newark Part No.57AJ0468
Product RangeTrenchFET
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds12V
Continuous Drain Current Id40A
Drain Source On State Resistance0.002ohm
On Resistance Rds(on)0.002ohm
Transistor Case StylePowerPAK SO
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max1V
Power Dissipation48W
Power Dissipation Pd48W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET
Qualification-
SVHCLead (21-Jan-2025)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
12V
Drain Source On State Resistance
0.002ohm
Transistor Case Style
PowerPAK SO
Rds(on) Test Voltage
4.5V
Power Dissipation
48W
No. of Pins
8Pins
Product Range
TrenchFET
SVHC
Lead (21-Jan-2025)
Transistor Polarity
N Channel
Continuous Drain Current Id
40A
On Resistance Rds(on)
0.002ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1V
Power Dissipation Pd
48W
Operating Temperature Max
150°C
Qualification
-
Technical Docs (2)
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability