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SI7898DP-T1-GE3
Power MOSFET, N Channel, 150 V, 3 A, 85 mohm, PowerPAK SO, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 21 week(s)
| Quantity | Price |
|---|---|
| 2000+ | $1.340 |
| 4000+ | $1.220 |
| 6000+ | $1.170 |
| 10000+ | $1.130 |
Price for:Each (Supplied on Full Reel)
Minimum: 3000
Multiple: 3000
$4,020.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI7898DP-T1-GE3
Newark Part No.15R5230
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds150V
Continuous Drain Current Id3A
Drain Source On State Resistance85mohm
On Resistance Rds(on)0.068ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage6V
Power Dissipation Pd1.9W
Transistor Case StylePowerPAK SO
Gate Source Threshold Voltage Max4V
Power Dissipation1.9W
No. of Pins8Pins
Operating Temperature Max150°C
Qualification-
Product Range-
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
150V
Drain Source On State Resistance
85mohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
1.9W
Gate Source Threshold Voltage Max
4V
No. of Pins
8Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
3A
On Resistance Rds(on)
0.068ohm
Rds(on) Test Voltage
6V
Transistor Case Style
PowerPAK SO
Power Dissipation
1.9W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate