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SIDR220EP-T1-RE3
Power MOSFET, N Channel, 25 V, 415 A, 580 µohm, PowerPAK SO, Surface Mount
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ManufacturerVISHAY
Manufacturer Part NoSIDR220EP-T1-RE3
Newark Part No.62AJ4905
Product RangeTrenchFET Gen IV Series
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | $0.847 |
| 10+ | $0.847 |
| 50+ | $0.847 |
| 100+ | $0.847 |
| 500+ | $0.847 |
| 1000+ | $0.847 |
| 2500+ | $0.847 |
| 5000+ | $0.847 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$0.85
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIDR220EP-T1-RE3
Newark Part No.62AJ4905
Product RangeTrenchFET Gen IV Series
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds25V
Continuous Drain Current Id415A
On Resistance Rds(on)480µohm
Drain Source On State Resistance580µohm
Transistor Case StylePowerPAK SO
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.1V
Power Dissipation Pd150W
Power Dissipation150W
No. of Pins8Pins
Operating Temperature Max175°C
Product RangeTrenchFET Gen IV Series
Qualification-
MSLMSL 1 - Unlimited
SVHCLead
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
25V
On Resistance Rds(on)
480µohm
Transistor Case Style
PowerPAK SO
Rds(on) Test Voltage
10V
Power Dissipation Pd
150W
No. of Pins
8Pins
Product Range
TrenchFET Gen IV Series
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
415A
Drain Source On State Resistance
580µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.1V
Power Dissipation
150W
Operating Temperature Max
175°C
Qualification
-
SVHC
Lead
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate