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SIR165DP-T1-GE3
MOSFET, P-CH, -30V, -60A, 150DEG C
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ManufacturerVISHAY
Manufacturer Part NoSIR165DP-T1-GE3
Newark Part No.81AC2789
Product RangeTrenchFET Gen III
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | $3.240 |
| 10+ | $2.280 |
| 25+ | $2.080 |
| 50+ | $1.870 |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
$16.20
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIR165DP-T1-GE3
Newark Part No.81AC2789
Product RangeTrenchFET Gen III
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id60A
On Resistance Rds(on)0.0038ohm
Drain Source On State Resistance4600µohm
Transistor Case StylePowerPAK SO
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd65.8W
Gate Source Threshold Voltage Max2.3V
Power Dissipation65.8W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET Gen III
Qualification-
SVHCLead (07-Nov-2024)
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.0038ohm
Transistor Case Style
PowerPAK SO
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2.3V
No. of Pins
8Pins
Product Range
TrenchFET Gen III
MSL
MSL 1 - Unlimited
Transistor Polarity
P Channel
Continuous Drain Current Id
60A
Drain Source On State Resistance
4600µohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
65.8W
Power Dissipation
65.8W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (07-Nov-2024)
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
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