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SIR800ADP-T1-GE3
MOSFET, N-CH, 177A, 20V, POWERPAK SO
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSIR800ADP-T1-GE3
Newark Part No.99AC9576
Product RangeTrenchFET Gen IV
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | $3.340 |
| 25+ | $2.920 |
| 100+ | $2.340 |
| 500+ | $2.080 |
| 1000+ | $1.600 |
| 2500+ | $1.530 |
| 5000+ | $1.460 |
| 10000+ | $1.450 |
Price for:Each
Minimum: 1
Multiple: 1
$3.34
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIR800ADP-T1-GE3
Newark Part No.99AC9576
Product RangeTrenchFET Gen IV
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id177A
On Resistance Rds(on)0.00112ohm
Drain Source On State Resistance1350µohm
Transistor Case StylePowerPAK SO
Transistor MountingSurface Mount
Power Dissipation Pd62.5W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.5V
Power Dissipation62.5W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET Gen IV
Qualification-
SVHCLead (07-Nov-2024)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
20V
On Resistance Rds(on)
0.00112ohm
Transistor Case Style
PowerPAK SO
Power Dissipation Pd
62.5W
Gate Source Threshold Voltage Max
1.5V
No. of Pins
8Pins
Product Range
TrenchFET Gen IV
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
177A
Drain Source On State Resistance
1350µohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
62.5W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (07-Nov-2024)
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability