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SIS447DN-T1-GE3
MOSFET, P-CH, 20V, 18A, POWERPAK 1212 ROHS COMPLIANT: YES
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ManufacturerVISHAY
Manufacturer Part NoSIS447DN-T1-GE3
Newark Part No.57AJ0414
Product RangeTrenchFET Gen III
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | $1.910 |
| 25+ | $1.560 |
| 100+ | $0.997 |
| 500+ | $0.823 |
| 1000+ | $0.645 |
| 2500+ | $0.615 |
| 10000+ | $0.590 |
| 25000+ | $0.580 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$1.91
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIS447DN-T1-GE3
Newark Part No.57AJ0414
Product RangeTrenchFET Gen III
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id18A
Drain Source On State Resistance7100µohm
On Resistance Rds(on)0.0058ohm
Transistor Case StylePowerPAK 1212
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.2V
Power Dissipation Pd52W
Power Dissipation52W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET Gen III
Qualification-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
20V
Drain Source On State Resistance
7100µohm
Transistor Case Style
PowerPAK 1212
Rds(on) Test Voltage
10V
Power Dissipation Pd
52W
No. of Pins
8Pins
Product Range
TrenchFET Gen III
SVHC
No SVHC (21-Jan-2025)
Channel Type
P Channel
Continuous Drain Current Id
18A
On Resistance Rds(on)
0.0058ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.2V
Power Dissipation
52W
Operating Temperature Max
150°C
Qualification
-
Technical Docs (2)
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability