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SISA12BDN-T1-GE3
MOSFET, N-CH, 30V, 87A, SURFACE MOUNT ROHS COMPLIANT: YES
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ManufacturerVISHAY
Manufacturer Part NoSISA12BDN-T1-GE3
Newark Part No.26AK3557
Product RangeTrenchFET Gen IV Series
Technical Datasheet
5,660 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $1.480 |
| 10+ | $1.080 |
| 25+ | $0.966 |
| 50+ | $0.860 |
| 100+ | $0.755 |
| 250+ | $0.683 |
| 500+ | $0.611 |
| 1000+ | $0.564 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$1.48
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSISA12BDN-T1-GE3
Newark Part No.26AK3557
Product RangeTrenchFET Gen IV Series
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id87A
Drain Source On State Resistance0.0027ohm
On Resistance Rds(on)0.0027ohm
Transistor Case StylePowerPAK 1212
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.4V
Power Dissipation Pd52W
Power Dissipation52W
No. of Pins8Pins
Operating Temperature Max150°C
Qualification-
Product RangeTrenchFET Gen IV Series
MSLMSL 1 - Unlimited
SVHCLead (10-Jun-2022)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.0027ohm
Transistor Case Style
PowerPAK 1212
Rds(on) Test Voltage
10V
Power Dissipation Pd
52W
No. of Pins
8Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
87A
On Resistance Rds(on)
0.0027ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.4V
Power Dissipation
52W
Operating Temperature Max
150°C
Product Range
TrenchFET Gen IV Series
SVHC
Lead (10-Jun-2022)
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (10-Jun-2022)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability