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| Quantity | Price |
|---|---|
| 1+ | $1.550 |
| 10+ | $1.150 |
| 25+ | $1.080 |
| 50+ | $1.010 |
| 100+ | $0.936 |
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Multiple: 5
$7.75
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSISS23DN-T1-GE3
Newark Part No.01AC4971
Product RangeTrenchFET
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id50A
Drain Source On State Resistance0.0045ohm
On Resistance Rds(on)0.0035ohm
Transistor Case StylePowerPAK 1212
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max900mV
Power Dissipation57W
Power Dissipation Pd57W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET
Qualification-
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.0045ohm
Transistor Case Style
PowerPAK 1212
Rds(on) Test Voltage
4.5V
Power Dissipation
57W
No. of Pins
8Pins
Product Range
TrenchFET
MSL
MSL 1 - Unlimited
Transistor Polarity
P Channel
Continuous Drain Current Id
50A
On Resistance Rds(on)
0.0035ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
900mV
Power Dissipation Pd
57W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (21-Jan-2025)
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability