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SISS63DN-T1-GE3
MOSFET, P-CH, -20V, -127.5A, 150DEG C ROHS COMPLIANT: YES
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ManufacturerVISHAY
Manufacturer Part NoSISS63DN-T1-GE3
Newark Part No.42AH1979
Product RangeTrenchFET Gen III
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | $2.160 |
| 10+ | $1.510 |
| 25+ | $1.380 |
| 50+ | $1.250 |
| 100+ | $1.110 |
Price for:Each (Supplied on Cut Tape)
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Multiple: 5
$10.80
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSISS63DN-T1-GE3
Newark Part No.42AH1979
Product RangeTrenchFET Gen III
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id127.5A
On Resistance Rds(on)0.0022ohm
Drain Source On State Resistance2700µohm
Transistor Case StylePowerPAK 1212-8S
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd65.8W
Gate Source Threshold Voltage Max1.5V
Power Dissipation65.8W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET Gen III
Qualification-
SVHCLead (07-Nov-2024)
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
20V
On Resistance Rds(on)
0.0022ohm
Transistor Case Style
PowerPAK 1212-8S
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
1.5V
No. of Pins
8Pins
Product Range
TrenchFET Gen III
MSL
MSL 1 - Unlimited
Transistor Polarity
P Channel
Continuous Drain Current Id
127.5A
Drain Source On State Resistance
2700µohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
65.8W
Power Dissipation
65.8W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (07-Nov-2024)
Technical Docs (2)
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability