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SISS80DN-T1-GE3
MOSFET, N CH, 20V, 210A, POWERPAK 1212 ROHS COMPLIANT: YES
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 25 week(s)
| Quantity | Price |
|---|---|
| 1+ | $2.480 |
| 10+ | $1.980 |
| 25+ | $1.840 |
| 50+ | $1.700 |
| 100+ | $1.560 |
| 250+ | $1.560 |
| 500+ | $1.560 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$2.48
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSISS80DN-T1-GE3
Newark Part No.74AH4895
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id210A
On Resistance Rds(on)760µohm
Drain Source On State Resistance920µohm
Transistor Case StylePowerPAK 1212-8S
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.5V
Power Dissipation65W
Power Dissipation Pd65W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (07-Nov-2024)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
20V
On Resistance Rds(on)
760µohm
Transistor Case Style
PowerPAK 1212-8S
Rds(on) Test Voltage
10V
Power Dissipation
65W
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
210A
Drain Source On State Resistance
920µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.5V
Power Dissipation Pd
65W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (07-Nov-2024)
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability