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SUD09P10-195-GE3
Power MOSFET, P Channel, 100 V, 8.8 A, 0.195 ohm, TO-252 (DPAK), Surface Mount
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| Quantity | Price |
|---|---|
| 1+ | $1.690 |
| 10+ | $1.190 |
| 25+ | $1.110 |
| 50+ | $1.030 |
| 100+ | $0.940 |
| 250+ | $0.865 |
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$1.69
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSUD09P10-195-GE3
Newark Part No.70AC6526
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id8.8A
Drain Source On State Resistance0.195ohm
On Resistance Rds(on)0.162ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd32.1W
Gate Source Threshold Voltage Max2.5V
Power Dissipation32.1W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCLead
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.195ohm
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2.5V
No. of Pins
3Pins
Product Range
-
MSL
-
Transistor Polarity
P Channel
Continuous Drain Current Id
8.8A
On Resistance Rds(on)
0.162ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
32.1W
Power Dissipation
32.1W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability