Dual MOSFETs | Newark Électronique Canada

Réf. fabricant	Code Commande	Fabricant / Description	Prix pour	Prix	Channel Type	Drain Source Voltage Vds N Channel	Drain Source Voltage Vds	Continuous Drain Current Id	Drain Source Voltage Vds P Channel	Continuous Drain Current Id N Channel	Continuous Drain Current Id P Channel	Drain Source On State Resistance N Channel	Drain Source On State Resistance P Channel	Transistor Case Style	No. of Pins	Power Dissipation N Channel	Power Dissipation P Channel	Operating Temperature Max	Qualification

FDMA1029PZ	04M9096 Data Sheet RoHS	ONSEMI Dual MOSFET P Channel 20 V 3.1 A	Each (Supplied on Full Reel) Bobine complète	3000+0,451 $ 6000+0,424 $ 12000+0,404 $ 18000+0,383 $ 30000+0,370 $	P Channel	-	20V	3.1A	20V	-	3.1A	-	0.06ohm	µFET	8Pins	-	1.4W	150°C	-
DMHC6070LSD-13	28AK8436 Data Sheet RoHS	DIODES INC. MOSFET N/P-CH 60V 3.1A	Each (Supplied on Cut Tape) Bandes découpées	1+2,830 $ 10+1,780 $ 25+1,570 $ 50+1,370 $ 100+1,170 $ Plus de tarifs	Complementary Dual N and Dual P Channel	60V	60V	3.1A	60V	3.1A	3.1A	0.1ohm	0.17ohm	SOIC	8Pins	1.6W	1.6W	150°C	-
PMDPB56XNEAX	74AH1121 Data Sheet RoHS	NEXPERIA MOSFET DUAL N-CH 30V 3.1A DFN2020D	Each (Supplied on Cut Tape) Bandes découpées	5+1,690 $ 10+1,050 $ 25+0,921 $ 50+0,794 $ 100+0,670 $ Plus de tarifs	N Channel	30V	30V	3.1A	30V	3.1A	3.1A	0.072ohm	-	DFN2020D	6Pins	485mW	485mW	150°C	AEC-Q101
FDMA1029PZ	34M6110 Data Sheet RoHS	ONSEMI Dual MOSFET Dual P Channel 3.1 A 20 V	Each (Supplied on Cut Tape) Bandes découpées	1+1,460 $ 10+0,911 $ 25+0,805 $ 50+0,698 $ 100+0,591 $ Plus de tarifs	P Channel	-	20V	3.1A	20V	-	3.1A	-	0.06ohm	µFET	8Pins	-	1.4W	150°C	-