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Dual MOSFETs :
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Continuous Drain Current Id P Channel
=4.4A
1
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(3)
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Channel Type
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Drain Source Voltage Vds N Channel
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Drain Source Voltage Vds
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Continuous Drain Current Id
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Drain Source Voltage Vds P Channel
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Continuous Drain Current Id N Channel
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Drain Source On State Resistance N Channel
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Drain Source On State Resistance P Channel
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Transistor Case Style
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Emballage
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| Comparer | Réf. fabricant | Code Commande | Fabricant / Description | Disponibilité | Prix pour | Prix | Quantité | Channel Type | Drain Source Voltage Vds N Channel | Drain Source Voltage Vds | Continuous Drain Current Id | Drain Source Voltage Vds P Channel | Continuous Drain Current Id N Channel | Continuous Drain Current Id P Channel | Drain Source On State Resistance N Channel | Drain Source On State Resistance P Channel | Transistor Case Style | No. of Pins | Power Dissipation N Channel | Power Dissipation P Channel | Operating Temperature Max | Qualification | Product Range |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Each (Supplied on Cut Tape) Bandes découpées | 3000+1,480 $ | N Channel | 20V | 20V | 4.4A | 20V | 4.4A | 4.4A | 0.032ohm | 0.032ohm | ChipFET | 8Pins | 1.1W | 1.1W | 150°C | - | - | ||||||
Each (Supplied on Cut Tape) Bandes découpées | 1+2,370 $ 10+1,510 $ 25+1,330 $ 50+1,170 $ | Complementary N and P Channel | 30V | 30V | 5.4A | 30V | 4.4A | 4.4A | 0.05ohm | 0.07ohm | SOIC | 8Pins | 2.1W | 2.1W | 150°C | - | - | ||||||
86AK6600 RoHS | Each (Supplied on Full Reel) Bobine complète | 500+0,708 $ 1000+0,672 $ 2000+0,647 $ 3000+0,638 $ 5000+0,631 $ | Complementary N and P Channel | 30V | - | - | 30V | 4.4A | 4.4A | 0.07ohm | 0.07ohm | SOIC | 8Pins | 2.1W | 2.1W | 150°C | - | - | |||||
11AN9601 RoHS | Each (Supplied on Cut Tape) Bandes découpées | 5+0,467 $ 10+0,413 $ 25+0,367 $ 50+0,229 $ 100+0,189 $ Plus de tarifs | Dual P Channel | - | - | - | 60V | - | 4.4A | - | 0.085ohm | SOIC | 8Pins | - | 3.3W | 175°C | AEC-Q101 | TrenchFET Series | |||||
