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Silicon Carbide (SiC) MOSFETs & Modules :
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Fabricant
(4)
Drain Source On State Resistance
=0.0158ohm
1
(1)
(3)
(1)
(2)
(2)
(1)
(1)
(1)
MOSFET Module Configuration
(3)
Channel Type
(3)
Continuous Drain Current Id
(4)
Drain Source Voltage Vds
(4)
Transistor Case Style
(1)
(2)
No. of Pins
(2)
(1)
(1)
Rds(on) Test Voltage
(4)
Gate Source Threshold Voltage Max
(4)
Power Dissipation
(4)
Emballage
(2)
(1)
(1)
| Comparer | Réf. fabricant | Code Commande | Fabricant / Description | Disponibilité | Prix pour | Prix | Quantité | MOSFET Module Configuration | Channel Type | Continuous Drain Current Id | Drain Source Voltage Vds | Drain Source On State Resistance | Transistor Case Style | No. of Pins | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | Operating Temperature Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
16AM9218 RoHS | STMICROELECTRONICS | Each | 1+37,760 $ 10+34,010 $ 25+30,250 $ 50+26,500 $ 100+25,160 $ Plus de tarifs | Single | N Channel | 110A | 900V | 0.0158ohm | HiP247 | 4Pins | 18V | 4.2V | 625W | 200°C | ||||
04AM0269RL RoHS | STMICROELECTRONICS | Each (Supplied on Cut Tape) Mise en bobine | 1+32,000 $ 50+22,250 $ 100+21,140 $ 250+20,850 $ 500+19,670 $ Plus de tarifs | - | - | 110A | 900V | 0.0158ohm | - | 7Pins | 18V | 4.2V | 625W | 175°C | ||||
04AM0269 RoHS | STMICROELECTRONICS | Each (Supplied on Cut Tape) Bandes découpées | 1+32,000 $ 50+22,250 $ 100+21,140 $ 250+20,850 $ 500+19,670 $ Plus de tarifs | Single | N Channel | 110A | 900V | 0.0158ohm | H2PAK | 7Pins | 18V | 4.2V | 625W | 175°C | ||||
47AM2253 RoHS | STMICROELECTRONICS | Each | 1+30,390 $ 5+28,910 $ 10+27,430 $ 25+25,900 $ 50+24,280 $ Plus de tarifs | Single | N Channel | 110A | 900V | 0.0158ohm | HiP247 | 3Pins | 18V | 4.2V | 625W | 200°C | ||||
