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Silicon Carbide (SiC) MOSFETs & Modules :
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Drain Source On State Resistance
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MOSFET Module Configuration
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Channel Type
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Continuous Drain Current Id
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Drain Source Voltage Vds
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Power Dissipation
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Emballage
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| Comparer | Réf. fabricant | Code Commande | Fabricant / Description | Disponibilité | Prix pour | Prix | Quantité | MOSFET Module Configuration | Channel Type | Continuous Drain Current Id | Drain Source Voltage Vds | Drain Source On State Resistance | Transistor Case Style | No. of Pins | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | Operating Temperature Max | Product Range |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Each | 1+53,300 $ 5+50,640 $ 10+38,350 $ 25+37,580 $ 50+36,810 $ Plus de tarifs | Single | N Channel | 81A | 1.7kV | 0.028ohm | TO-247 | 4Pins | 20V | 4.3V | 535W | 175°C | EliteSiC Series | ||||||
65AK6018 RoHS | Each | 1+64,820 $ 5+62,390 $ 10+59,660 $ 25+56,690 $ 50+53,980 $ Plus de tarifs | Single | N Channel | 81A | 1.7kV | 0.028ohm | TO-247 | 4Pins | 20V | 4.3V | 535W | 175°C | EliteSiC Series | |||||
Each | 800+41,990 $ 1600+41,150 $ 2400+40,310 $ 4000+39,470 $ 8000+38,630 $ Plus de tarifs | Single | N Channel | 71A | 1.7kV | 0.028ohm | TO-263 (D2PAK) | 7Pins | 20V | 4.3V | 428W | 175°C | EliteSiC Series | ||||||
65AK6015 RoHS | Each (Supplied on Cut Tape) Bandes découpées | 1+70,950 $ 50+57,830 $ 100+56,670 $ 250+55,520 $ 500+54,360 $ Plus de tarifs | Single | N Channel | 71A | 1.7kV | 0.028ohm | TO-263 (D2PAK) | 7Pins | 20V | 4.3V | 428W | 175°C | EliteSiC Series | |||||
22AM0335 RoHS | STMICROELECTRONICS | Each (Supplied on Cut Tape) Bandes découpées | 1+29,500 $ 50+20,640 $ 100+19,600 $ 250+19,100 $ 500+18,720 $ Plus de tarifs | Single | N Channel | 100A | 1.2kV | 0.028ohm | HU3PAK | 7Pins | 18V | 4.2V | 555W | 175°C | - | ||||
