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Silicon Carbide (SiC) MOSFETs & Modules :
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Fabricant
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Drain Source On State Resistance
=0.313ohm
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MOSFET Module Configuration
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Channel Type
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Continuous Drain Current Id
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Drain Source Voltage Vds
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Transistor Case Style
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No. of Pins
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Rds(on) Test Voltage
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Gate Source Threshold Voltage Max
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Power Dissipation
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Emballage
(3)
| Comparer | Réf. fabricant | Code Commande | Fabricant / Description | Disponibilité | Prix pour | Prix | Quantité | MOSFET Module Configuration | Channel Type | Continuous Drain Current Id | Drain Source Voltage Vds | Drain Source On State Resistance | Transistor Case Style | No. of Pins | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | Operating Temperature Max | Product Range |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
16AN4144 RoHS | Each | 1+7,850 $ 10+6,840 $ 25+6,020 $ 50+5,670 $ 100+4,960 $ Plus de tarifs | Single | N Channel | 12A | 1.2kV | 0.313ohm | TO-263 (D2PAK) | 7Pins | 18V | 3V | 85W | 175°C | MaxSiC Series | |||||
Each | 1+11,910 $ 10+9,970 $ 25+9,470 $ 50+8,970 $ 100+8,480 $ Plus de tarifs | Single | N Channel | 10.5A | 1.2kV | 0.313ohm | TO-247AD | 3Pins | 20V | 3.1V | 56W | 150°C | MaxSiC Series | ||||||
Each | 1+14,770 $ 10+11,200 $ 25+10,720 $ 50+10,250 $ 100+9,770 $ Plus de tarifs | Single | N Channel | 10.5A | 1.2kV | 0.313ohm | TO-247AD | 4Pins | 20V | 3.1V | 56W | 150°C | MaxSiC Series | ||||||
