Silicon Carbide (SiC) MOSFETs & Modules | Newark Électronique Canada

Réf. fabricant	Code Commande	Fabricant / Description	Prix pour	Prix	MOSFET Module Configuration	Channel Type	Continuous Drain Current Id	Drain Source Voltage Vds	Drain Source On State Resistance	Transistor Case Style	No. of Pins	Rds(on) Test Voltage	Gate Source Threshold Voltage Max	Power Dissipation	Operating Temperature Max	Product Range

UF3C120080B7S	78AK8895 Data Sheet RoHS	ONSEMI SILICON CARBIDE MOSFET SINGLE	Each (Supplied on Cut Tape) Bandes découpées	1+25,730 $ 10+18,310 $ 25+17,980 $ 50+17,620 $ 100+17,270 $ Plus de tarifs	Single	N Channel	28.8A	1.2kV	85mohm	D2PAK	7Pins	12V	6V	190W	175°C	-
UF3C065080B7S	78AK8894 Data Sheet RoHS	ONSEMI Silicon Carbide MOSFET Single N Channel 27 A 650 V 85 mohm D2PAK	Each (Supplied on Cut Tape) Bandes découpées	1+17,460 $ 10+12,150 $ 25+11,580 $ 50+11,030 $ 100+10,460 $ Plus de tarifs	Single	N Channel	27A	650V	85mohm	D2PAK	7Pins	12V	6V	136.4W	175°C	-
NVHL075N065SC1	94AK7519 RoHS	ONSEMI Silicon Carbide MOSFET Single N Channel 38 A 650 V 85 mohm TO-247	Each	1+24,820 $ 10+22,150 $ 25+19,480 $ 50+16,810 $ 100+15,950 $ Plus de tarifs	Single	N Channel	38A	650V	85mohm	TO-247	3Pins	18V	4.3V	148W	175°C	EliteSiC Series
NTBL075N065SC1	08AM4234 RoHS	ONSEMI Silicon Carbide MOSFET Single N Channel 37 A 650 V 85 mohm H-PSOF	Each (Supplied on Cut Tape) Bandes découpées	1+11,730 $ 50+8,410 $ 100+6,190 $ 250+6,160 $ 500+6,120 $ Plus de tarifs	Single	N Channel	37A	650V	85mohm	H-PSOF	8Pins	18V	4.3V	139W	175°C	EliteSiC Series
G3R75MT12J-TR	14AM5532 Data Sheet	GENESIC Silicon Carbide MOSFET Single N Channel 38 A 1.2 kV 85 mohm TO-263 (D2PAK)	Each (Supplied on Cut Tape) Bandes découpées	800+13,460 $	Single	N Channel	38A	1.2kV	85mohm	TO-263 (D2PAK)	7Pins	18V	2.7V	196W	175°C	-