Silicon Carbide (SiC) MOSFETs & Modules | Newark Électronique Canada

Réf. fabricant	Code Commande	Fabricant / Description	Prix pour	Prix	MOSFET Module Configuration	Transistor Polarity	Channel Type	Continuous Drain Current Id	Drain Source Voltage Vds	On Resistance Rds(on)	Drain Source On State Resistance	Transistor Case Style	No. of Pins	Rds(on) Test Voltage	Gate Source Threshold Voltage Max	Power Dissipation Pd	Power Dissipation	Operating Temperature Max

SCTW90N65G2V	69AH2147 Data Sheet RoHS	STMICROELECTRONICS Silicon Carbide MOSFET Single N Channel 119 A 650 V 0.018 ohm TO-247	Each	1+44,980 $ 5+44,120 $ 10+43,260 $ 25+42,450 $ 60+41,630 $ Plus de tarifs	Single	N Channel	N Channel	119A	650V	0.018ohm	0.018ohm	TO-247	3Pins	18V	3.2V	565W	565W	200°C
SCT4018KRC15	29AK7109 Data Sheet RoHS	ROHM Silicon Carbide MOSFET Single N Channel 81 A 1.2 kV 0.018 ohm TO-247	Each	1+44,770 $ 5+40,480 $ 10+36,180 $ 25+35,460 $ 50+34,730 $ Plus de tarifs	Single	N Channel	N Channel	81A	1.2kV	0.018ohm	0.018ohm	TO-247	4Pins	18V	4.8V	312W	312W	175°C
SCT4018KEC11	29AK7108 Data Sheet RoHS	ROHM Silicon Carbide MOSFET Single N Channel 81 A 1.2 kV 0.018 ohm TO-247N	Each	1+38,310 $ 5+33,750 $ 10+29,180 $ 25+28,240 $ 50+27,320 $ Plus de tarifs	Single	N Channel	N Channel	81A	1.2kV	0.018ohm	0.018ohm	TO-247N	3Pins	18V	4.8V	312W	312W	175°C
SCTL90N65G2V	40AJ8413 Data Sheet RoHS	STMICROELECTRONICS Silicon Carbide MOSFET Single N Channel 40 A 650 V 0.018 ohm PowerFLAT	Each (Supplied on Cut Tape) Bandes découpées	1+41,750 $ 10+32,220 $ 25+31,900 $ 50+31,890 $ 100+31,860 $ Plus de tarifs	Single	N Channel	N Channel	40A	650V	0.018ohm	0.018ohm	PowerFLAT	5Pins	18V	3.2V	935W	935W	175°C
SCT4018KW7TL	29AK7110 Data Sheet RoHS	ROHM Silicon Carbide MOSFET Single N Channel 75 A 1.2 kV 0.018 ohm TO-263	Each (Supplied on Cut Tape) Bandes découpées	1+42,320 $ 10+33,820 $ 25+32,890 $ 50+31,960 $ 100+31,030 $	Single	N Channel	N Channel	75A	1.2kV	0.018ohm	0.018ohm	TO-263	7Pins	18V	4.8V	267W	267W	175°C
SCTWA90N65G2V-4	50AJ6011 Data Sheet RoHS	STMICROELECTRONICS Silicon Carbide MOSFET Single N Channel 119 A 650 V 0.018 ohm HiP247	Each	1+33,750 $	Single	N Channel	N Channel	119A	650V	0.018ohm	0.018ohm	HiP247	4Pins	18V	3.2V	565W	565W	200°C
SCTWA90N65G2V	36AJ4505 Data Sheet RoHS	STMICROELECTRONICS Silicon Carbide MOSFET Single N Channel 119 A 650 V 0.018 ohm HiP247LL	Each	1+41,800 $	Single	N Channel	N Channel	119A	650V	0.018ohm	0.018ohm	HiP247LL	3Pins	18V	3.2V	565W	565W	200°C
SCTH90N65G2V-7	69AH2142 Data Sheet RoHS	STMICROELECTRONICS Silicon Carbide MOSFET Single N Channel 116 A 650 V 0.018 ohm H2PAK	Each (Supplied on Cut Tape) Bandes découpées	Prix non disponible. Veuillez contacter le service clientèle.	Single	N Channel	N Channel	116A	650V	0.018ohm	0.018ohm	H2PAK	7Pins	18V	3.2V	484W	484W	175°C