Silicon Carbide (SiC) MOSFETs & Modules :
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MOSFET Module Configuration
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Drain Source Voltage Vds
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Drain Source On State Resistance
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| Comparer | Réf. fabricant | Code Commande | Fabricant / Description | Disponibilité | Prix pour | Prix | Quantité | MOSFET Module Configuration | Channel Type | Continuous Drain Current Id | Drain Source Voltage Vds | Drain Source On State Resistance | Transistor Case Style | No. of Pins | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | Operating Temperature Max | Product Range |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Each (Supplied on Cut Tape) Bandes découpées | 1+17,540 $ 50+12,690 $ 100+10,540 $ 250+10,320 $ 500+10,110 $ Plus de tarifs | - | N Channel | 55A | 650V | 0.05ohm | TDFN | 4Pins | 18V | 4.3V | 187W | 175°C | EliteSiC Series | ||||||
65AK6019 RoHS | Each (Supplied on Cut Tape) Bandes découpées | 5+18,660 $ 50+13,010 $ 100+10,540 $ 250+10,320 $ 500+10,110 $ Plus de tarifs | Single | N Channel | 39A | 650V | 0.033ohm | TDFN | 4Pins | 18V | 4.3V | 187W | 175°C | EliteSiC Series | |||||

