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IRLML6402TRPBF
Power MOSFET, P Channel, 20 V, 3.7 A, 0.065 ohm, SOT-23, Surface Mount
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ManufacturerINFINEON
Manufacturer Part NoIRLML6402TRPBF
Newark Part No.97K2355
Product RangeHEXFET Series
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | $0.529 |
| 10+ | $0.296 |
| 25+ | $0.259 |
| 50+ | $0.220 |
| 100+ | $0.182 |
| 250+ | $0.176 |
| 500+ | $0.167 |
| 1000+ | $0.151 |
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIRLML6402TRPBF
Newark Part No.97K2355
Product RangeHEXFET Series
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id3.7A
On Resistance Rds(on)0.065ohm
Drain Source On State Resistance0.065ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max550mV
Power Dissipation1.3W
Power Dissipation Pd1.3W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeHEXFET Series
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The IRLML6402PBF is -20V single P channel HEXFET power MOSFET in Micro3 (SOT-23) package. This MOSFET features extremely low on resistance per silicon area, ruggedness, fast switching as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications such as battery and load management, portable electronics and PCMCIA cards and printed circuit board where space is at a premium.
- Drain to source voltage (Vds) of -20V
- Gate to source voltage of ±12V
- On resistance Rds(on) of 80mohm at Vgs -2.5V
- Power dissipation Pd of 1.3W at 25°C
- Continuous drain current Id of -3.7A at Vgs -4.5V and 25°C
- Operating junction temperature range from -55°C to 150°C
- 0.01W/°C linear derating factor
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
20V
On Resistance Rds(on)
0.065ohm
Transistor Case Style
SOT-23
Rds(on) Test Voltage
4.5V
Power Dissipation
1.3W
No. of Pins
3Pins
Product Range
HEXFET Series
MSL
-
Transistor Polarity
P Channel
Continuous Drain Current Id
3.7A
Drain Source On State Resistance
0.065ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
550mV
Power Dissipation Pd
1.3W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
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Product Compliance Certificate
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