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FDN360P
Power MOSFET, P Channel, 30 V, 2 A, 0.08 ohm, SuperSOT, Surface Mount
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDN360P
Newark Part No.58K1466
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id2A
On Resistance Rds(on)0.08ohm
Drain Source On State Resistance0.08ohm
Transistor MountingSurface Mount
Power Dissipation Pd500mW
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max20V
Transistor Case StyleSuperSOT
Power Dissipation500mW
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Product Overview
The FDN360P is a surface mount, single P channel PowerTrench MOSFET in superSOT-23 package. PowerTrench process has been tailored to minimize the onstate resistance and maintain low gate charge for superior switching performance. This device is well suited for low voltage and battery powered applications.
- High performance trench technology for extremely low Rds(ON)
- Low gate charge typically 6.2nC
- Drain to source voltage (Vds) of -30V
- Gate to source voltage of ±20V
- Continuous drain current (Id) of -2A at 25°C
- Power dissipation (Pd) of 500mW
- Low on state resistance of 100mohm at Vgs -4.5V
- Operating temperature range from -55°C to 150°C
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.08ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
SuperSOT
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
P Channel
Continuous Drain Current Id
2A
Drain Source On State Resistance
0.08ohm
Power Dissipation Pd
500mW
Gate Source Threshold Voltage Max
20V
Power Dissipation
500mW
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (2)
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Associated Products
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
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