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ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTD35P6LLF6
Newark Part No.45AC7540
Product RangeSTripFET F6
Technical Datasheet
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Quantity | Price |
---|---|
1+ | $1.130 |
10+ | $1.120 |
25+ | $1.120 |
50+ | $1.120 |
100+ | $1.120 |
250+ | $1.030 |
500+ | $1.030 |
1000+ | $1.030 |
Price for:Each (Supplied on Cut Tape)
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Multiple: 1
$1.13
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTD35P6LLF6
Newark Part No.45AC7540
Product RangeSTripFET F6
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id35A
Drain Source On State Resistance0.028ohm
On Resistance Rds(on)0.025ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Power Dissipation Pd70W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.5V
Power Dissipation70W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeSTripFET F6
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
Product Overview
This device is a P-channel Power MOSFET developed using the STripFET F6 technology, with a new trench gate structure.
- Very low on-resistance
- Very low gate charge
- High avalanche ruggedness
- Low gate drive power loss
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.028ohm
Transistor Case Style
TO-252 (DPAK)
Power Dissipation Pd
70W
Gate Source Threshold Voltage Max
2.5V
No. of Pins
3Pins
Product Range
STripFET F6
MSL
-
Channel Type
P Channel
Continuous Drain Current Id
35A
On Resistance Rds(on)
0.025ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
70W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate