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SSM3J35CTC,L3F(T
Power MOSFET, P Channel, 20 V, 250 mA, 1.1 ohm, CST, Surface Mount
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|---|---|
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| 10+ | $0.044 |
| 25+ | $0.044 |
| 50+ | $0.044 |
| 100+ | $0.044 |
| 250+ | $0.044 |
| 500+ | $0.044 |
| 1000+ | $0.044 |
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Product Information
ManufacturerTOSHIBA
Manufacturer Part NoSSM3J35CTC,L3F(T
Newark Part No.08AK7431
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id250mA
On Resistance Rds(on)1.1ohm
Drain Source On State Resistance1.1ohm
Transistor Case StyleCST
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max1V
Power Dissipation Pd500mW
Power Dissipation500mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCTo Be Advised
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
20V
On Resistance Rds(on)
1.1ohm
Transistor Case Style
CST
Rds(on) Test Voltage
4.5V
Power Dissipation Pd
500mW
No. of Pins
3Pins
Product Range
-
SVHC
To Be Advised
Channel Type
P Channel
Continuous Drain Current Id
250mA
Drain Source On State Resistance
1.1ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1V
Power Dissipation
500mW
Operating Temperature Max
150°C
Qualification
-
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability