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SI2319DS-T1-GE3
Power MOSFET, P Channel, 40 V, 2.3 A, 0.082 ohm, SOT-23, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
Packaging Options
Available to Order
Manufacturer Standard Lead Time: 15 week(s)
| Quantity | Price |
|---|---|
| 500+ | $0.574 |
Price for:Each (Supplied on Cut Tape)
Minimum: 3000
Multiple: 3000
$1,722.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2319DS-T1-GE3
Newark Part No.84R8030
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id2.3A
Drain Source On State Resistance0.082ohm
On Resistance Rds(on)0.065ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd750mW
Transistor Case StyleSOT-23
Gate Source Threshold Voltage Max3V
Power Dissipation750mW
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
40V
Drain Source On State Resistance
0.082ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
750mW
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
P Channel
Continuous Drain Current Id
2.3A
On Resistance Rds(on)
0.065ohm
Rds(on) Test Voltage
10V
Transistor Case Style
SOT-23
Power Dissipation
750mW
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (3)
Associated Products
3 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate