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SI5429DU-T1-GE3
MOSFET, P-CH, 30V, 12A, PP CHIPFET
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI5429DU-T1-GE3Copy
Manufacturer Standard Lead Time23 weeks
Newark Part No.63W4146
Your Part Number
Available to Order
Manufacturer Standard Lead Time: 23 week(s)
| Quantity | Price |
|---|---|
| 1+ | $1.300 |
| 10+ | $1.010 |
| 25+ | $0.921 |
| 50+ | $0.837 |
| 100+ | $0.741 |
| 500+ | $0.645 |
| 1000+ | $0.540 |
| 2500+ | $0.495 |
Price for:Each
Minimum: 1
Multiple: 1
$1.30
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI5429DU-T1-GE3Copy
Manufacturer Standard Lead Time23 weeks
Newark Part No.63W4146
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id12A
On Resistance Rds(on)0.0122ohm
Drain Source On State Resistance0.0122ohm
Transistor Case StylePowerPAK
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1V
Power Dissipation Pd31W
Power Dissipation31W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (04-Feb-2026)
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.0122ohm
Transistor Case Style
PowerPAK
Rds(on) Test Voltage
10V
Power Dissipation Pd
31W
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
P Channel
Continuous Drain Current Id
12A
Drain Source On State Resistance
0.0122ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1V
Power Dissipation
31W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (04-Feb-2026)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate