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Available to Order
Manufacturer Standard Lead Time: 15 week(s)
Quantity | Price |
---|---|
500+ | $5.170 |
Price for:Each
Minimum: 1000
Multiple: 1000
$5,170.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIHP33N60EF-GE3
Newark Part No.31Y6763
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id33A
On Resistance Rds(on)0.085ohm
Drain Source On State Resistance0.098ohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Power Dissipation Pd278W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation278W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCLead
Product Overview
The SIHP33N60EF-GE3 is a 650V N-channel enhancement-mode Power MOSFET with single configuration. It is suitable for SMPS, server, telecom and PFC power supplies, solar, motor drives, induction heating, renewable energy and welding applications.
- Fast body diode
- Reduced trr, Qrr and IRRM
- Low figure-of-merit(FOM) RON x Qg
- Low input capacitance (Ciss)
- Reduced switching and conduction losses
- Ultra low gate charge
- Halogen-free
Applications
Industrial, Power Management, Communications & Networking, Lighting, Portable Devices, Alternative Energy
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
600V
On Resistance Rds(on)
0.085ohm
Transistor Case Style
TO-220AB
Power Dissipation Pd
278W
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
33A
Drain Source On State Resistance
0.098ohm
Transistor Mounting
Through Hole
Rds(on) Test Voltage
10V
Power Dissipation
278W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead
Technical Docs (3)
Associated Products
4 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate