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SISS61DN-T1-GE3
MOSFET, P-CH, -20V, -111.9A, 150DEG C
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ManufacturerVISHAY
Manufacturer Part NoSISS61DN-T1-GE3
Newark Part No.02AH2522
Product RangeTrenchFET Gen III
Technical Datasheet
36,083 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $2.090 |
| 10+ | $1.480 |
| 25+ | $1.350 |
| 50+ | $1.220 |
| 100+ | $1.100 |
| 250+ | $1.000 |
Price for:Each (Supplied on Cut Tape)
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Multiple: 1
$2.09
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSISS61DN-T1-GE3
Newark Part No.02AH2522
Product RangeTrenchFET Gen III
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id111.9A
Drain Source On State Resistance3500µohm
On Resistance Rds(on)0.0029ohm
Transistor Case StylePowerPAK 1212
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max900mV
Power Dissipation65.8W
Power Dissipation Pd65.8W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET Gen III
Qualification-
SVHCLead (07-Nov-2024)
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
20V
Drain Source On State Resistance
3500µohm
Transistor Case Style
PowerPAK 1212
Rds(on) Test Voltage
4.5V
Power Dissipation
65.8W
No. of Pins
8Pins
Product Range
TrenchFET Gen III
MSL
MSL 1 - Unlimited
Channel Type
P Channel
Continuous Drain Current Id
111.9A
On Resistance Rds(on)
0.0029ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
900mV
Power Dissipation Pd
65.8W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (07-Nov-2024)
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
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