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0.11ohm Gallium Nitride (GaN) FETs :
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Drain Source On State Resistance
=0.11ohm
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Drain Source Voltage Vds
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Continuous Drain Current Id
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Typical Gate Charge
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Product Range
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Emballage
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| Comparer | Réf. fabricant | Code Commande | Fabricant / Description | Disponibilité | Prix pour | Prix | Quantité | Drain Source Voltage Vds | Continuous Drain Current Id | Drain Source On State Resistance | Typical Gate Charge | Transistor Case Style | Transistor Mounting | No. of Pins | Product Range |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Each | 1+6,880 $ 10+4,720 $ 25+4,190 $ 50+3,660 $ 100+3,410 $ | 650V | 18.9A | 0.11ohm | 14.4nC | TO-220 | Through Hole | 3Pins | SuperGaN Series | ||||||
26AM1880 RoHS | RENESAS | Each (Supplied on Cut Tape) Bandes découpées | 1+8,410 $ 10+5,620 $ 25+5,090 $ 50+4,560 $ 100+4,020 $ Plus de tarifs | 650V | 18.9A | 0.11ohm | 14.4nC | PQFN | Surface Mount | 8Pins | SuperGaN Series | ||||
